Browsing by Author "Akhgar, G"

Now showing 1 - 3 of 3
  • No Thumbnail Available
    Item
    Increased phase coherence length in a porous topological insulator
    (American Physical Society (APS), 2023-06-15) Nguyen, A; Akhgar, G; Cortie, DL; Bake, A; Pastuovic, Z; Zhao, W; Liu, C; Chen, YH; Suzuki, K; Fuhrer, MS; Culcer, D; Hamilton, AR; Edmonds, MT; Karel, J
    The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surfacelike. Weak antilocalization was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics. ©2023 American Physical Society
  • Thumbnail Image
    Item
    Top-down patterning of topological surface and edge states using a focused ion beam
    (Springer Nature, 2023-03-27) Bake, A; Zhang, Q; Ho, CS; Causer, GL; Zhao, WY; Yue, ZJ; Nguyen, A; Akhgar, G; Karel, J; Mitchell, DRG; Pastuovic, Z; Lewis, RA; Cole, JH; Nancarrow, M; Wang, XL; Cortie, DL
    The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ2 switches from 1 to 0. These states offer prospects for quantum electronics; however, a method is needed to spatially-control ℤ2 to pattern conducting channels. It is shown that modifying Sb2Te3 single-crystal surfaces with an ion beam switches the topological insulator into an amorphous state exhibiting negligible bulk and surface conductivity. This is attributed to a transition from ℤ2 = 1 → ℤ2 = 0 at a threshold disorder strength. This observation is supported by density functional theory and model Hamiltonian calculations. Here we show that this ion-beam treatment allows for inverse lithography to pattern arrays of topological surfaces, edges and corners which are the building blocks of topological electronics. Open Access This article is licensed under a Creative Commons Attribution 4.0 © Crown Copyright 2023
  • No Thumbnail Available
    Item
    Transport measurements in porous Bi2Te3 thin films
    (American Physical Society, 2022-03-16) Akhgar, G; Nguyen, A; Cortie, DL; Bake, A; Zhao, WY; Liu, C; Fuhrer, MS; Culcer, D; Hamilton, AR; Edmonds, MT; Karel, J
    Recent theoretical work has predicted the existence of disordered topological insulators , however, minimal experimental work has been conducted on disordered TIs. Here we used molecular-beam epitaxy (MBE) to grow Bi2Te3 thin films that were comprised of nanocrystals embedded in an amorphous matrix. Further disorder was introduced through Ne ion irradiation which produced porosity in the films. In this talk we will present magnetoresistance measurements on porous Bi2Te3, where weak anti-localisation (WAL) was observed. The magnetoresistance curves were fitted using a Dirac Fermion model specifically derived to model weak antilocalization in TIs. Our results also show that the temperature dependence of the phase coherence length in porous Bi2Te3, with an increased surface to volume ratio, exhibits 2D-like transport.