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ANSTO Publications Online

Welcome to the ANSTO Institutional Repository known as APO.

The APO database has been migrated to version 8.3. The functionality has changed, but the content remains the same.

ANSTO Publications Online is a digital repository for publications authored by ANSTO staff since 2007. The Repository also contains ANSTO Publications, such as Reports and Promotional Material. ANSTO publications prior to 2007 continue to be added progressively as they are in identified in the library. ANSTO authors can be identified under a single point of entry within the database. The citation is as it appears on the item, even with incorrect spelling, which is marked by (sic) or with additional notes in the description field.

If items are only held in hardcopy in the ANSTO Library collection notes are being added to the item to identify the Dewey Call number: as DDC followed by the number.

APO will be integrated with the Research Information System which is currently being implemented at ANSTO. The flow on effect will be permission to publish, which should allow pre-prints and post prints to be added where content is locked behind a paywall. To determine which version can be added to APO authors should check Sherpa Romeo. ANSTO research is increasingly being published in open access due mainly to the Council of Australian University Librarians read and publish agreements, and some direct publisher agreements with our organisation. In addition, open access items are also facilitated through collaboration and open access agreements with overseas authors such as Plan S.

ANSTO authors are encouraged to use a CC-BY licence when publishing open access. Statistics have been returned to the database and are now visible to users to show item usage and where this usage is coming from.

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Recent Submissions

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    Atomic layer deposition (ALD) of TiO2 and Al2O3 thin films on silicon
    (SPIE, 2024-04-02) Mitchell, DRG; Triani, G; Attard, DJ; Finnie, KS; Evans, PJ; Barbé, CJ; Bartlett, JR
    The essential features of the ALD process involve sequentially saturating a surface with a (sub)monolayer of reactive species, such as a metal halide, then reacting it with a second species to form the required phase in-situ. Repetition of the reaction sequence allows the desired thickness to be deposited. The self-limiting nature of the reactions ensures excellent conformality, and sequential processing results in exquisite control over film thickness, albeit at rather slow deposition rates, typically <200nm/hr. We have been developing our capability with ALD deposition, to understand the influence of deposition parameters on the nature of TiO2 and Al2O3 films (high and low refractive index respectively), and multilayer stacks thereof. These stacks have potential applications as anti-reflection coatings and optical filters. This paper will explore the evolution of structure in our films as a function of deposition parameters including temperature and substrate surface chemistry. A broad range of techniques have been applied to the study of these films, including cross sectional transmission electron microscopy, spectroscopic ellipsometry, secondary ion mass spectrometry etc. These have enabled a wealth of microstructural and compositional information on the films to be acquired, such as accurate film thickness, composition, crystallization sequence and orientation with respect to the substrate. The ALD method is shown to produce single layer films and multilayer stacks with exceptional uniformity and flatness, and in the case of stacks, chemically abrupt interfaces. We are currently extending this technology to the coating of polymeric substrates. © (2004) Society of Photo-Optical Instrumentation Engineers (SPIE).
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    Characterization of thin metal oxide films grown by atomic layer deposition
    (SPIE, 2024-04-02) Evans, PJ; Prince, KE; Triani, G; Finnie, KS; Mitchell, DRG; Barbe, CJ
    Atomic layer deposition (ALD) is a versatile technique for producing a wide variety of thin films. It provides a method for precisely controlling film thickness and composition. In addition films produced by ALD are highly conformal and are therefore excellent for the generation of MEMS devices. In the present study, single and multi layer films of TiO2 and Al2O3 have been deposited on silicon substrates at 200 and 300°C. These films have been characterised by a number of surface analytical techniques including dynamic secondary ion mass spectrometry (SIMS), ion beam analysis, electron microscopy and spectroscopic ellipsometry. These methods have enabled the optical, chemical and structural properties of the films to be accurately assessed. The results obtained to date demonstrate that ALD produces highly uniform single and multi layer films with minimal impurities. These high quality films are being applied to new opportunities for the development of future MEMS devices. © (2004) Society of Photo-Optical Instrumentation Engineers (SPIE)
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    The free-energy barrier to hydride transfer across a dipalladium complex
    (Royal Society of Chemistry, 2015-02-05) Vanston, CR; Kearley, GJ; Edwards, AJ; Darwish, TA; de Souza, NR; Ramirez-Cuesta, AJ; Gardiner, MG
    We use density-functional theory molecular dynamics (DFT-MD) simulations to determine the hydride transfer coordinate between palladium centres of the crystallographically observed terminal hydride locations, Pd–Pd–H, originally postulated for the solution dynamics of the complex bis-NHC dipalladium hydride [{(MesIm)2CH2}2Pd2H][PF6], and then calculate the free-energy along this coordinate. We estimate the transfer barrier-height to be about 20 kcal mol−1 with a hydride transfer rate in the order of seconds at room temperature. We validate our DFT-MD modelling using inelastic neutron scattering which reveals anharmonicity of the hydride environment that is so pronounced that there is complete failure of the harmonic model for the hydride ligand. The simulations are extended to high temperature to bring the H-transfer to a rate that is accessible to the simulation technique. © The Royal Society of Chemistry 2015
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    Thermal residual micro-stresses and texture characterizations in NbC-Ni cemented carbides
    (European Powder Metallurgy Association, 2021-10-18) Lavigne, O; Luzin, V; Sandoval, D
    Cemented carbide composites develop very large micro-stresses due to the coefficient of thermal expansion mismatch between the metallic carbide and the binder phases. While micro-stresses developed in WC-Co/Ni systems have been investigated, so far, there is no information on the ones developed in NbC-Ni composites. This study aims to provide preliminary data on this matter. The thermal micro-stresses and texture developed in NbC-Ni systems were characterized by neutron diffraction. Stresses in the Ni phase were found to decrease with the increase of binder content in the composite material (from 7vol.% to 13vol.%) and ranged between approximately -2900 MPa to -1600 MPa, while stresses in the NbC phase were found to be relatively constant at approximately +240 MPa. The sintering temperature was found to have a major impact on the Ni grain number, with thousands of grains measured against just a few for samples sintered respectively at 1350ºC and 1450ºC.
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    Mid-infrared incoherent three-dimensional imaging using Lucy-Richardson-Rosen algorithm
    (Optica Publishing Group, 2022-07-22) Anand, V; Han, M; Maksimovic, J; Ng, SH; Katkus, T; Klein, A; Bambery, KR; Tobin, MJ; Vongsvivut, JP; Juodkazis, S
    Two computational reconstruction methods namely the Lucy-Richardson algorithm and non-linear reconstruction have been combined to develop Lucy-Richardson-Rosen algorithm. This new algorithm has been used to convert a two-dimensional infrared spectral map into a three-dimensional image. © 2022 The Author(s)