Browsing by Author Lawson, EM
Showing results 1 to 11 of 11
| Issue Date | Title | Author(s) |
| Feb-1983 | An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis | Tavendale, AJ; Lawson, EM |
| Apr-1973 | The behaviour of high purity semiconductor surface-barrier nuclear radiation detectors at low temperatures | Lawson, EM; Tavendale, AJ |
| Nov-1970 | A large volume, multi-element Ge(Li) spectrometer | Lawson, EM; Tavendale, AJ; Dawson, AC |
| Jun-1983 | A method for annealing ion-implanted silicon on a vitreous carbon strip heater | Lawson, EM |
| Feb-1971 | The operation near liquid helium temperature of a gold-barrier hyper-pure germanium detector for gamma-rays | Lawson, EM; Tavendale, AJ |
| Oct-1981 | Preliminary investigations of the formation of laser-doped contacts on semiconductors | Lawson, EM |
| Aug-1982 | A q-switched ruby laser for producing laser-doped contacts to semiconductors | Rose, A; Lawson, EM |
| Oct-1987 | Rapid thermal annealing of neutron transmutation doped silicon | Lawson, EM; Lee, PJ |
| Sep-1983 | Search for an anomalous near-surface yield deficit in Rutherford backscattering spectra from implanted germanium and silicon | Lawson, EM; Williams, JS; Chivers, DJ; Short, KT; Appleton, BR |
| Jan-1993 | Surface passivation of high-purity germanium gamma-ray detector | Alexiev, D; Butcher, KSA; Edmondson, M; Lawson, EM |
| Sep-1980 | Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature | Pearton, SJ; Williams, AA; Tavendale, AJ; Lawson, EM |
