| Issue Date | Title | Author(s) |
| 31-Jan-2005 | Dielectric properties and photoluminescence of diatomaceous silicas | Jong Wah, JW; Ferris, JM; Wintrebert-Fouquet, M; Butcher, KSA |
| 1-Aug-2000 | Digital coincidence counting - initial results | Butcher, KSA; Watt, GC; Alexiev, D; van der Gaast, H; Davies, JB; Mo, L; Wyllie, HA; Keightley, JD; Smith, D; Woods, MJ |
| 1-Mar-1996 | Effect of crucible materials on impurities in LPE-GaAs | Mo, L; Butcher, KSA; Alexiev, D |
| Sep-1991 | Etch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants. | Keane, M; Butcher, KSA; Alexiev, D |
| 1-Dec-1995 | Growth of high purity liquid phase epitaxial GaAs in a silica growth system | Butcher, KSA; Mo, L; Alexiev, D; Tansley, TL |
| Nov-1991 | High purity liquid phase epitaxial gallium arsenide nuclear radiation detector. | Alexiev, D; Butcher, KSA |
| Dec-2005 | Luminescence study of porous diatoms | Butcher, KSA; Ferris, JM; Phillips, MR; Wintrebert-Fouquet, M; Jong Wah, JW; Jovanovic, N; Vyverman, W; Chepurnov, VA |
| May-2004 | Luminescence study of porous diatoms | Butcher, KSA; Ferris, JM; Phillips, MR; Wintrebert-Fouquet, M; Jong Wah, JW; Jovanovic, N; Vyverman, W; Chepurnov, VA |
| 1-Jul-1990 | The measurement of minority carrier diffusion lengths for high purity GaAs, using an electron beam induced current technique | Butcher, KSA; Alexiev, D; Tansley, Tl; Seung, S |
| Feb-2003 | Photoluminescence and cathodoluminescence studies of diatoms - nature’s own nano-porous silica structures | Butcher, KSA; Ferris, JM; Phillips, MR |
| 9-Feb-1994 | Process optimization and characterization of Ni-Ge-Au ohmic contacts to n+ GaAs heterostructures | Lumpkin, NE; Lumpkin, GR; Butcher, KSA |
| Jan-1993 | Surface passivation of high-purity germanium gamma-ray detector | Alexiev, D; Butcher, KSA; Edmondson, M; Lawson, EM |
| Oct-1995 | Surface passivation of liquid phase epitaxial GaAS | Alexiev, D; Butcher, KSA; Mo, L; Edmondson, M |
| Jul-1990 | The measurement of minority carrier diffusion lengths for high purity GaAs using an electron beam induced current technique | Butcher, KSA; Alexiev, D; Tansley, TL; Leung, S |
| 5-Feb-2004 | Variations in the apparent optical band-gap of RPE-CVD grown indium nitride thin films | Butcher, KSA; Wintrebert-Fouquet, M; Chen, PPT; Tansley, TL; Prince, KE |
