Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
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Date
2009-09-10
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
The concentration dependence of H diffusion in amorphous Si (a-Si) formed by ion implantation is reported for implanted H profiles. An empirical relationship is proposed which relates the diffusion coefficient to the H concentration valid up to 0.3 at. %. B-enhanced H diffusion is observed and shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is applied to these data.
The Department of Electronic Materials Engineering at the Australian National University is acknowledged for providing access to ion implanting facilities. This work was supported by grants from the Australian Research Council and the Australian Institute of Nuclear Science and Engineering (Award No. AINGRA08035). © 2009 American Institute of Physics
Description
Keywords
Chemical bonds, Ion implantation, Epitaxy, Ion sources, Activation energy, Nanofluidics, Diffusion
Citation
Johnson, B. C., McCallum, J. C., Atanacio, A. J., & Prince, K. E. (2009). Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation. Applied Physics Letters, 95(10), 101911. doi:org/10.1063/1.3224189