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ANSTO Publications Online >
ANSTO Publications >
Scientific and Technical Reports >
Please use this identifier to cite or link to this item:
http://apo.ansto.gov.au/dspace/handle/10238/851
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| Title: | Cooled preamplifiers with N- or P-silicon JFET's. |
| Authors: | Ryan, RD |
| Issue Date: | Sep-1970 |
| Publisher: | Australian Nuclear Science and Technology Organisation |
| Abstract: | A voltage sensitive cooled preamplifier has been operated with comparable resolution from n- and p-Si junction field effect transistor's (JFET's). To obtain optimum JFET operating conditions it is necessary to consider in detail the inter-related parameters of device thermal resistance, the variation of JFET noise with temperature and of gate current with drain voltage. Measurement and optimisation procedures are described. |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/851 |
| ISBN: | 0642993777 |
| Appears in Collections: | Scientific and Technical Reports |
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