A method for annealing ion-implanted silicon on a vitreous carbon strip heater

Abstract

A description is given of a simple method for the transient annealing of ion-implanted semiconductors on a vitreous carbon strip heater. Samples of Si implanted with doses of 1-5 x 1015 cm-2 As and Sb ions at 35 or 80 KeV were annealed at temperatures in the range 650-1110oC and for times between 15 s and 2 min. Annealing was confirmed by Rutherford backscattering and electrical measurements. The details of these measurements are explained by taking into account the impurity solid solubility and the maximum as-implanted concentration. Supersaturated solutions of Sb and Si were found in all samples examined in this work. The production of supersaturation by strip heater annealing does not seem to have been reported elsewhere.