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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/690

Title: Method for annealing ion-implanted silicon on a vitreous carbon strip heater.
Authors: Lawson, EM
Issue Date: Jun-1983
Publisher: Australian Nuclear Science and Technology Organisation
Abstract: A description is given of a simple method for the transient annealing of ion-implanted semiconductors on a vitreous carbon strip heater. Samples of Si implanted with doses of 1-5 x 1015 cm-2 As and Sb ions at 35 or 80 KeV were annealed at temperatures in the range 650-1110oC and for times between 15 s and 2 min. Annealing was confirmed by Rutherford backscattering and electrical measurements. The details of these measurements are explained by taking into account the impurity solid solubility and the maximum as-implanted concentration. Supersaturated solutions of Sb and Si were found in all samples examined in this work. The production of supersaturation by strip heater annealing does not seem to have been reported elsewhere.
URI: http://apo.ansto.gov.au/dspace/handle/10238/690
ISBN: 064259774X
Appears in Collections:Scientific and Technical Reports

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