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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/6463

Title: IBIC microscopy of Helsinki n- & p-type FZ Si diodes selectively irradiated w focused He microbeam
Authors: Pastuovic, Z
Siegele, R
Garton, D
Cohen, D
Keywords: RADIATION HARDENING
SEMICONDUCTOR DEVICES
ION BEAMS
SILICON DIODES
THEORETICAL DATA
MEV RANGE
Issue Date: 13-May-2013
Publisher: IAEA
Citation: Pastuovic, Z., Siegele, R., Garton, D., & Cohen, D. (13-17 May 2013). IBIC microscopy of Helsinki n- & p-type FZ Si diodes selectively irradiated w focused He microbeam. Paper presented at the IAEA/CRP RCM on Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators, Vienna, Austria.
Abstract: Object of the research Study of the radiation hardness of semiconductors Method Use of focused MeV Ion beams to induce the damage and to probe the damage.Samples under study 2° RCM: …. the activity has been focused on the Fz silicon diodes from UniHe, and the study of the other materials and devices distributed among the participants has been postponed to the second phase, following the validation of the theoretical model.
URI: https://www.google.com.au/url?sa=t&rct=j&q=&esrc=s&source=web&cd=5&cad=rja&uact=8&ved=0ahUKEwip1ejeg9jJAhVBtZQKHbJUBdwQFggvMAQ&url=http%3A%2F%2Fwww.dfs.unito.it%2Fsolid%2FRICERCA%2FIBA%2FEVittone-3rd-RCM-IAEA.pdf&usg=AFQjCNESTbuCYMjHO8ViMWNhR5XXGBV7-Q&bvm=bv.109910813,d.dGo
http://apo.ansto.gov.au/dspace/handle/10238/6463
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