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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/3116

Title: Synthesis of self-assembled island-structured complex oxide dielectric films.
Authors: Sriram, S
Bhaskaran, M
Kostovski, G
Mitchell, DRG
Stoddart, PR
Austin, MW
Mitchell, A
Keywords: Dielectric Materials
Silicon
Sensitivity
Raman Spectroscopy
Microscopy
Surface Area
Issue Date: 24-Sep-2009
Publisher: American Chemical Society
Citation: Sriram, S., Bhaskaran, M., Kostovski, G., Mitchell, D. R. G., Stoddart, P. R., Austin, M. W., et al. (2009). Synthesis of self-assembled island-structured complex oxide dielectric films. Journal of Physical Chemistry C, 113(38), 16610-16614.
Abstract: A self-assembly driven process to synthesize island-structured dielectric films is presented. An intermetallic reaction in platinized silicon substrates provides preferential growth sites for the complex oxide dielectric layer. Microscopy and spectroscopy analyses have been used to propose a mechanism for this structuring process. This provides a simple and scalable process to synthesize films with increased surface area for sensors, especially those materials with a complex chemistry. The ability of these island-structured dielectric films to improve sensitivity by a factor of 100 compared to continuous films in applications as substrates for surface-enhanced Raman scattering (SERS) is demonstrated. © 2009, American Chemical Society
URI: http://dx.doi.org/10.1021/jp904832z
http://apo.ansto.gov.au/dspace/handle/10238/3116
ISSN: 1932-7447
Appears in Collections:Journal Articles

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