ANSTO Publications Online: Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications.

Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/309

Title:	Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications.
Authors:	Pearton, SJ Tavendale, AJ Williams, AA
Issue Date:	Dec-1980
Publisher:	Australian Nuclear Science and Technology Organisation
Abstract:	A deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transient conductance has been used to observe gamma-ray induced defect centres in the gate junction of 2N4416 Si field effect transistors. The defect concentrations increased linearly wth gamma-dose in the range 50 kGy to 10 x 10 3 kGy (5-1000 Mrad) for the common E(c) - 0.17 eV level and in the range 500 kGy to 10 x 10 3 kGy (50- 1000 Mrad) for the levels E(c) - 0.22 eV and E(c) - 0.44 eV. Another common level a hole trap at E(v) + 0.42 eV was the only minority trap observed. The technique may be useful for measuring gamma-fluxes in situations inaccessible to standard dosemeters (e.g. flux-mapping).
URI:	http://apo.ansto.gov.au/dspace/handle/10238/309
ISBN:	0642597030
Appears in Collections:	Scientific and Technical Reports

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