The nature of the Ev + 0.23 eV and Ev + 0.38 eV gamma-induced centres in Ge.

Abstract

All p-type Ge grown by the Czochralski technique from silica crucibles under an H sub 2 atmosphere shows two dominant acceptor defects on gamma irradiation. Measurements by DLTS are reported which support the hypothesis that these centres (E(v) + 0.23 eV E(v) + 0.38 eV) are most likely due to complexes between oxygen and lattice vacancies.