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|Title: ||Characterisation of single-crystal mercuric iodide.|
|Authors: ||Alexiev, D|
|Keywords: ||HGI2 Semiconductor Detectors|
Deep Level Transient Spectroscopy
Light Emitting Diodes
|Issue Date: ||21-Jan-2004|
|Citation: ||Alexiev, D., Dytlewski, N., Reinhard, M. I., & Mo, L. (2004). Characterisation of single-crystal mercuric iodide. Nuclear Instruments & Methods in Physics Research Section a-Accelerators, Spectrometers, Detectors and Associated Equipment, 517(1-3), 226-229.|
|Abstract: ||The mobility-lifetime product of electrons and holes in single-crystal mercuric iodide for detector applications was measured to be 4×10−5 and 3×10−5 cm2/V respectively. The charge carriers were optically induced by a near band gap excitation using a GaP (560 nm) light emitting diode. Optical Deep Level Transient Spectrometry measurements of trapping states showed three dominant energy levels at 0.26, 0.8 and 1.4 eV. There is little correlation between trapping levels reported in the literature. © 2004, Elsevier Ltd.|
|Appears in Collections:||Journal Articles|
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