Characterisation of single-crystal mercuric iodide

Alexiev, D; Dytlewski, N; Reinhard, MI; Mo, L

Characterisation of single-crystal mercuric iodide

Date

2004-01-21

Authors

Publisher

Elsevier

Abstract

The mobility-lifetime product of electrons and holes in single-crystal mercuric iodide for detector applications was measured to be 4×10−5 and 3×10−5 cm2/V respectively. The charge carriers were optically induced by a near band gap excitation using a GaP (560 nm) light emitting diode. Optical Deep Level Transient Spectrometry measurements of trapping states showed three dominant energy levels at 0.26, 0.8 and 1.4 eV. There is little correlation between trapping levels reported in the literature. © 2004, Elsevier Ltd.

Keywords

HGI2 semiconductor detectors, Trapping, Deep level transient spectroscopy, Monocrystals, Electrons, Light emitting diodes

Citation

Alexiev, D., Dytlewski, N., Reinhard, M. I., & Mo, L. (2004). Characterisation of single-crystal mercuric iodide. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 517(1-3), 226-229. doi:10.1016/j.nima.2003.09.049