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|Title: ||Transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade silicon.|
|Authors: ||Alexiev, D|
Deep Level Transient Spectroscopy
|Issue Date: ||11-Sep-1999|
|Citation: ||Alexiev, D., Reinhard, M. I., Mo, L., & Rosenfeld, A. (1999). Transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade silicon. Nuclear Instruments & Methods in Physics Research Section a-Accelerators, Spectrometers, Detectors and Associated Equipment, 434(1), 103-113.|
|Abstract: ||The use of conventional capacitance-based deep-level transient spectroscopy is not applicable when defect concentrations approach the background carrier concentration. Due to this limitation the technique cannot be used for examining heavily irradiated silicon, or semi-insulating semiconductor materials. Optical deep-level transient conductance spectroscopy can overcome the limitations of capacitance-based techniques through the measurement of a conductance transient measured with a marginal oscillator. This paper provides details of the application of this method to heavily damaged high-purity silicon. Silicon-based PIN detector structures irradiated with 1 MeV neutrons, to approximately 3×1013 n/cm2 and detectors irradiated with 24 GeV/c protons, to 3.8×1013 p/cm2, were examined. © 1999, Elsevier Ltd.|
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