Effect of crucible materials on impurities in LPE-GaAs

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Date
1996-03-01
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Publisher
Elsevier
Abstract
LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps. © 1996, Elsevier Ltd.
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Keywords
Crucibles, Gallium arsenides, Capacitance, Electric potential, Deep level transient spectroscopy, Epitaxy
Citation
Mo, L., Butcher, K. S. A., & Alexiev, D. (1996). Effect of crucible materials on impurities in LPE-GaAs. Journal of Crystal Growth, 160(1-2), 7-12. doi:10.1016/0022-0248(95)00895-0
URI
http://dx.doi.org/10.1016/0022-0248(95)00895-0
 http://apo.ansto.gov.au/dspace/handle/10238/2305
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