ANSTO Publications Online: Effect of crucible materials on impurities in LPE-GaAs.

Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/2305

Title:	Effect of crucible materials on impurities in LPE-GaAs.
Authors:	Mo, L Butcher, KSA Alexiev, D
Keywords:	Crucibles Gallium Arsenides Capacitance Electric Potential Deep Level Transient Spectroscopy Epitaxy
Issue Date:	1-Mar-1996
Publisher:	Elsevier
Citation:	Mo, L., Butcher, K. S. A., & Alexiev, D. (1996). Effect of crucible materials on impurities in LPE-GaAs. Journal of Crystal Growth, 160(1-2), 7-12.
Abstract:	LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps. © 1996, Elsevier Ltd.
URI:	http://dx.doi.org/10.1016/0022-0248(95)00895-0 http://apo.ansto.gov.au/dspace/handle/10238/2305
ISSN:	0022-0248
Appears in Collections:	Journal Articles

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