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|Title: ||Effect of vacuum annealing on the phase stability of Ti3SiC2.|
|Authors: ||Low, IM|
|Issue Date: ||Aug-2007|
|Citation: ||Low, I. M., Oo, Z., & Prince, K. E. (2007). Effect of vacuum annealing on the phase stability of Ti3SiC2. Journal of the American Ceramic Society, 90(8), 2610-2614.|
|Abstract: ||The effect of vacuum annealing on the thermal stability and phase transition of Ti3SiC2 has been investigated by X-ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction,
and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti3SiC2 undergoes a surface dissociation to
form nonstoichiometric TiC and/or Ti5Si3Cx that commences at ~1200°C and becomes very pronounced at ≥ 1500°C. Composition
depth profiling at the near surface of vacuum-annealed Ti3SiC2 by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti5Si3Cx with depth. © 2007, Wiley-Blackwell. The definitive version is available at www3.interscience.wiley.com|
|Appears in Collections:||Journal Articles|
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