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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/1990

Title: Oxygen incorporation in Ti2AlC thin films.
Authors: Rosen, J
Persson, POA
Ionescu, M
Kondyurin, A
McKenzie, DR
Bilek, MMM
Keywords: Thin Films
Oxygen
Cathodes
Crystal Structure
Deposition
Crystal Lattices
Issue Date: 11-Feb-2008
Publisher: American Institute of Physics
Citation: Rosen, J., Persson, P. O. A., Ionescu, M., Kondyurin, A., McKenzie, D. R., & Bilek, M. M. M. (2008). Oxygen incorporation in Ti2AlC thin films. Applied Physics Letters, 92(6), 3.
Abstract: Thin films of Ti2AlC MAX phase have been deposited using a multiple cathode pulsed cathodic arc. Evidence for substantial oxygen incorporation in the MAX phase is presented, likely originating from residual gas present in the vacuum chamber during deposition. The characteristic MAX phase crystal structure is maintained, in agreement with ab initio calculations, supporting substitutional O in C lattice positions. On the basis of these results, we propose the existence of a MAX phase-like material with material properties tuned by the incorporation of oxygen. Additionally, possible unintentional O incorporation in previously reported MAX phase materials is suggested. © 2008, American Institute of Physics
URI: http://dx.doi.org/10.1063/1.2838456
http://apo.ansto.gov.au/dspace/handle/10238/1990
ISSN: 0003-6951
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