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|Title: ||Radiation tolerance of M(n+1)AX(n) phases, Ti3AlC2 and Ti3SiC2.|
|Authors: ||Whittle, KR|
|Keywords: ||Electron Diffraction|
Transmission Electron Microscopy
|Issue Date: ||1-Aug-2010|
|Citation: ||Whittle, K. R., Blackford, M. G., Aughterson, R. D., Moricca, S., Lumpkin, G. R., Riley, D. P., et al. (2010). Radiation tolerance of M(n+1)AX(n) phases, Ti3AlC2 and Ti3SiC2. Acta Materialia, 58(13), 4362-4368.|
|Abstract: ||During investigations of novel material types with uses in future nuclear technologies (ITER/DEMO and GenIV fission reactors), ternary carbides with compositions Ti3AlC2 and Ti3SiC2 have been irradiated with high Xe fluences, 6.25 × 1015 ions cm−2 (25–30 dpa), using the IVEM-TANDEM facility at Argonne National Laboratory. Both compositions show high tolerance to damage, and give indications that they are likely to remain crystalline to much higher fluences. There is a visible difference in tolerance between Ti3AlC2 and Ti3SiC2 that can be related to the changes in bonding within each material. These initial findings provide evidence for a novel class of materials (+200 compounds) with high radiation resistance, while, significantly, both of these materials are composed of low-Z elements and hence exhibit no long-term activation. © 2010, Elsevier Ltd.|
|Appears in Collections:||Journal Articles|
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