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|Title: ||Low temperature atomic layer deposition of titania thin films.|
|Authors: ||Triani, G|
|Issue Date: ||2-Apr-2010|
|Citation: ||Triani, G., Campbell, J. A., Evans, P. J., Davis, J., Latella, B. A., & Burford, R. P. (2010). Low temperature atomic layer deposition of titania thin films. Thin Solid Films, 518(12), 3182-3189.|
|Abstract: ||This paper presents a comprehensive study of atomic layer deposition of TiO2 films on silicon and polycarbonate substrates using TiCl4 and H2O as precursors at temperatures in the range 80–120°C. An in-situ quartz crystal microbalance was used to monitor different processing conditions and the resultant films were characterised ex-situ using a suite of surface analytical tools. In addition, the contact angle and wettability of as-deposited and UV irradiated films were assessed. The latter was found to reduce the contact angle from ≥ 80° to < 10°. Finally, the effect of surface pre-treatment on film toughness and adhesion was investigated and the results show a significant improvement for the pre-treated films. © 2010, Elsevier Ltd.|
|Appears in Collections:||Journal Articles|
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