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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/1663

Title: Effect of vacuum annealing on the thermal stability of Ti3SiC2/TiC/TiSi2 composites.
Authors: Pang, WK
Low, IM
O’Connor, BH
Studer, AJ
Peterson, VK
Palmquist, JP
Keywords: Annealing
Titanium
Silicon Carbides
Phase Stability
Neutron Diffraction
Thermal Shock
Issue Date: 1-Jan-2009
Publisher: The Australian Ceramic Society
Citation: Pang, W. K., Low, I. M., O’Connor, B. H., Studer, A. J., Peterson, V. K., & Palmquist, P. (2009). Effect of vacuum annealing on the thermal stability of Ti3SiC2/TiC/TiSi2 composites. Journal of the Australian Ceramic Society, 45, 72-77.
Abstract: Titanium silicon carbide (Ti3SiC2) possesses a unique combination of properties of both metals and ceramics, for it is thermally shock resistant, thermally and electrically conductive, damage tolerant, lightweight, highly oxidation resistant, elastically stiff, and mechanically machinable. In this research, the effect of high vacuum annealing on the phase stability and phase transitions of Ti3SiC2/TiC/TiSi2 composites up to 1550°C was studied using in-situ neutron diffraction. The role of TiC and TiSi2 on the thermal stability of Ti3SiC2 during vacuum annealing is discussed. TiC reacts with TiSi2 between 1400-1450°C to form Ti3SiC2. Above 1400°C, decomposition of Ti3SiC2 into TiC commenced and the rate increased with increased temperature and dwell time. Furthermore, the activation energy for the formatiTitanium silicon carbide (Ti3SiC2) possesses a unique combination of properties of both metals and ceramics, for it is thermally shock resistant, thermally and electrically conductive, damage tolerant, lightweight, highly oxidation resistant, elastically stiff, and mechanically machinable. In this research, the effect of high vacuum annealing on the phase stability and phase transitions of Ti3SiC2/TiC/TiSi2 composites up to 1550°C was studied using in-situ neutron diffraction. The role of TiC and TiSi2 on the thermal stability of Ti3SiC2 during vacuum annealing is discussed. TiC reacts with TiSi2 between 1400-1450°C to form Ti3SiC2. Above 1400°C, decomposition of Ti3SiC2 into TiC commenced and the rate increased with increased temperature and dwell time. Furthermore, the activation energy for the formation and decomposition of Ti3SiC2 was determined. on and decomposition of Ti3SiC2 was determined. © 2009, The Australian Ceramic Society
URI: http://apo.ansto.gov.au/dspace/handle/10238/1663
ISSN: 0004-881X
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