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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/1552

Title: Measurement of latent tracks in amorphous SiO2 using small angle X-ray scattering.
Authors: Kluth, P
Schnohr, CS
Sprouster, DJ
Byrne, AP
Cookson, DJ
Ridgway, MC
Keywords: Small Angle Scattering
Thin Films
Energy Absorption
Energy Losses
Silicon
Amorphous State
Issue Date: Jun-2008
Publisher: Elsevier
Citation: Kluth, P., Schnohr, C. S., Sprouster, D. J., Byrne, A. P., Cookson, D. J., & Ridgway, M. C. (2008). Measurement of latent tracks in amorphous SiO2 using small angle X-ray scattering. Nuclear Instruments & Methods in Physics Research Section b-Beam Interactions with Materials and Atoms, 266(12-13), 2994-2997.
Abstract: In this paper we present preliminary yet promising results on the measurement of latent ion tracks in amorphous, 2 mu m thick SiO2 layers using small angle X-ray scattering (SAXS). The tracks were generated by ion irradiation with 89 MeV An ions to fluences between 3 x 10(10) and 3 x 10(12) ions/cm(2). Transmission SAXS measurements show distinct scattering from the irradiated SiO2 as compared to the unirradiated material. Analysis of the SAXS spectra using a cylindrical model suggests a core-shell like density distribution in the ion tracks with a lower density core and a higher density shell as compared to unirradiated material. The total track radius of similar to 48 angstrom is in very good agreement with previous experiments and calculations based on an inelastic thermal spike model. © 2008, Elsevier Ltd.
URI: http://dx.doi.org/10.1016/j.nimb.2008.03.182
http://apo.ansto.gov.au/dspace/handle/10238/1552
ISSN: 0168-583X
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