Measurement of latent tracks in amorphous SiO2 using small angle x-ray scattering
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Date
2008-06
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
In this paper we present preliminary yet promising results on the measurement of latent ion tracks in amorphous, 2 mu m thick SiO2 layers using small angle X-ray scattering (SAXS). The tracks were generated by ion irradiation with 89 MeV An ions to fluences between 3 x 10(10) and 3 x 10(12) ions/cm(2). Transmission SAXS measurements show distinct scattering from the irradiated SiO2 as compared to the unirradiated material. Analysis of the SAXS spectra using a cylindrical model suggests a core-shell like density distribution in the ion tracks with a lower density core and a higher density shell as compared to unirradiated material. The total track radius of similar to 48 angstrom is in very good agreement with previous experiments and calculations based on an inelastic thermal spike model. © 2008, Elsevier Ltd.
Description
Keywords
Small angle scattering, Thin films, Energy absorption, Energy losses, Silicon, Amorphous state
Citation
Kluth, P., Schnohr, C. S., Sprouster, D. J., Byrne, A. P., Cookson, D. J., & Ridgway, M. C. (2008). Measurement of latent tracks in amorphous SiO2 using small angle x-ray scattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266(12-13), 2994-2997. doi:10.1016/j.nimb.2008.03.182