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ANSTO Publications Online >
Journal Publications >
Journal Articles >
Please use this identifier to cite or link to this item:
http://apo.ansto.gov.au/dspace/handle/10238/1451
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| Title: | Influence of annealing conditions on the growth and structure of embedded Pt nanocrystals. |
| Authors: | Giulian, R Araujo, LL Kluth, P Sprouster, DJ Schnohr, CS Johannessen, B Foran, GJ Ridgway, MC |
| Keywords: | Annealing Chemisorption Platinum Silicon Compounds Transmission Electron Microscopy Small Angle Scattering |
| Issue Date: | 15-Feb-2009 |
| Publisher: | American Institute of Physics |
| Citation: | Giulian, R., Araujo, L. L., Kluth, P., Sprouster, D. J., Schnohr, C. S., Johannessen, B., et al. (2009). Influence of annealing conditions on the growth and structure of embedded Pt nanocrystals. Journal of Applied Physics, 105(4), 8. |
| Abstract: | The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO2 has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O-2, or forming gas (95% N-2: 5% H-2) at temperatures ranging from 500 degrees C-1300 degrees C form spherical NCs with mean diameters ranging from 1-14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O-2 and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 degrees C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm. © 2009, American Institute of Physics |
| URI: | http://dx.doi.org/10.1063/1.3079506 http://apo.ansto.gov.au/dspace/handle/10238/1451 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Journal Articles |
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