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|Title: ||Silicon detector dead layer thickness estimates using proton bremsstrahlung from low atomic number targets.|
|Authors: ||Cohen, DD|
|Issue Date: ||Mar-2008|
|Citation: ||Cohen, D. D., Stelcer, E., Siegele, R., & Ionescu, M. (2008). Silicon detector dead layer thickness estimates using proton bremsstrahlung from low atomic number targets. X-Ray Spectrometry, 37(2), 125-128.|
|Abstract: ||Proton-induced bremsstrahlung radiation in the 1-5 keV energy range has been used to estimate the silicon dead layer thickness in a Si(Li) detector. This novel technique does not require accurate bremsstrahlung cross sections with x-ray energy; it just assumes these cross sections and hence the efficiency corrected yield is both smooth and continuous across the Si K edge at 1.838 keV. © 2008, Wiley-Blackwell. The definitive version is available at www3.interscience.wiley.com|
|Appears in Collections:||Journal Articles|
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