ANSTO Publications Online: Silicon detector dead layer thickness estimates using proton bremsstrahlung from low atomic number targets.

Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/1094

Title:	Silicon detector dead layer thickness estimates using proton bremsstrahlung from low atomic number targets.
Authors:	Cohen, DD Stelcer, E Siegele, R Ionescu, M
Keywords:	Silicon Bremsstrahlung Protons Energy Cross Sections keV Range
Issue Date:	Mar-2008
Publisher:	Wiley-Blackwell
Citation:	Cohen, D. D., Stelcer, E., Siegele, R., & Ionescu, M. (2008). Silicon detector dead layer thickness estimates using proton bremsstrahlung from low atomic number targets. X-Ray Spectrometry, 37(2), 125-128.
Abstract:	Proton-induced bremsstrahlung radiation in the 1-5 keV energy range has been used to estimate the silicon dead layer thickness in a Si(Li) detector. This novel technique does not require accurate bremsstrahlung cross sections with x-ray energy; it just assumes these cross sections and hence the efficiency corrected yield is both smooth and continuous across the Si K edge at 1.838 keV. © 2008, Wiley-Blackwell. The definitive version is available at www3.interscience.wiley.com
URI:	http://dx.doi.org/10.1002/xrs.1033 http://apo.ansto.gov.au/dspace/handle/10238/1094
ISSN:	0049-8246
Appears in Collections:	Journal Articles

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