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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/1075

Title: Comparison of the atomic structure of InP amorphized by electronic or nuclear ion energy-loss processes.
Authors: Schnohr, CS
Kluth, P
Byrne, AP
Foran, GJ
Ridgway, MC
Keywords: Absorption Spectroscopy
Silicon
Damage
Irradiation
Semiconductor Devices
Simulation
Energy Losses
Amorphous State
Issue Date: Feb-2008
Publisher: American Physical Society
Citation: Schnohr, C. S., Kluth, P., Byrne, A. P., Foran, G. J., & Ridgway, M. C. (2008). Comparison of the atomic structure of InP amorphized by electronic or nuclear ion energy-loss processes. Physical Review B, 77(7), 073204.
Abstract: InP was amorphized by ion irradiation in two very different regimes: (i) 185 MeV Au irradiation, where the energy loss was predominantly via inelastic processes (electronic stopping), or (ii) Se irradiation in an energy range of 0.08-7 MeV, where elastic processes (nuclear stopping) were dominant. The structural parameters of the amorphous phase were determined for as-irradiated and thermally relaxed samples using extended x-ray absorption fine structure spectroscopy. Despite the fundamentally different energy transfer mechanisms, no significant difference in the atomic structure of the two amorphized samples was observed. We attribute this result to a common "melt and quench" process responsible for amorphization. In fact, the measured structural parameters for the amorphized samples, including the fraction of homopolar In-In bonding, were consistent with simulations of the amorphous phase produced by assuming a quench from the melt. © 2008, American Physical Society
URI: http://dx.doi.org/10.1103/PhysRevB.77.073204
http://apo.ansto.gov.au/dspace/handle/10238/1075
ISSN: 1098-0121
Appears in Collections:Journal Articles

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