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|Title: ||Characterization of ion tracks in PMMA for single ion lithography.|
|Authors: ||Alves, A|
|Issue Date: ||Jul-2007|
|Citation: ||Alves, A., Johnston, P. N., Reichart, P., Jamieson, D. N., & Siegele, R. (2007). Characterization of ion tracks in PMMA for single ion lithography. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 260(1), 431-436.|
|Abstract: ||The ultimate resolution in ion beam lithography (IBL) can be achieved by etching tracks modified by the passage of a single ion impact which has a diameter in the order of 10 nm. For precise counting of single ions, a Si photodiode is used as a substrate onto which a PMMA film is spun. We have macroscopically investigated the sensitivity of PMMA using 3 MeV H end found that a deposited energy density of greater than 1 eV/nm(3) is required to remove the PMMA film for 60 s developing in a water:IPA 1:4 solution. From this sensitivity measurement we have determined that 8 MeV F, 71 MeV Cu and 88 MeV I ions should produce enough damage in a single ion strike to create a hole etched along the latent damage track. We have used AFM imaging to quantitatively characterise the hole diameter as a function of the incident ion and the developing time. It was found that for up to 8 min development in a water:IPA solution holes were created for the F, Cu and I ions. SEM imaging has also been used to verify the holes seen by AFM imaging. © 2007, Elsevier Ltd.|
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