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Issue DateTitleAuthor(s)
Sep-1991Etch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants.Keane, M; Butcher, KSA; Alexiev, D
Nov-1991High purity liquid phase epitaxial gallium arsenide nuclear radiation detector.Alexiev, D; Butcher, KSA
Jan-1993Surface passivation of high-purity germanium gamma-ray detectorAlexiev, D; Butcher, KSA; Edmondson, M; Lawson, EM
11-Sep-1999Transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade siliconAlexiev, D; Reinhard, MI; Mo, L; Rosenfeld, AB
1-Mar-1996Effect of crucible materials on impurities in LPE-GaAsMo, L; Butcher, KSA; Alexiev, D
Jul-1990The measurement of minority carrier diffusion lengths for high purity GaAs using an electron beam induced current techniqueButcher, KSA; Alexiev, D; Tansley, TL; Leung, S
Oct-1995Surface passivation of liquid phase epitaxial GaASAlexiev, D; Butcher, KSA; Mo, L; Edmondson, M
Jul-1992Liquid phase epitaxy of gallium arsenide - a reviewAlexiev, D
1-Dec-1995Growth of high purity liquid phase epitaxial GaAs in a silica growth systemButcher, KSA; Mo, L; Alexiev, D; Tansley, TL
1-Jul-1990The measurement of minority carrier diffusion lengths for high purity GaAs, using an electron beam induced current techniqueButcher, KSA; Alexiev, D; Tansley, Tl; Seung, S

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