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Issue DateTitleAuthor(s)
Dec-1980Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applicationsPearton, SJ; Tavendale, AJ; Williams, AA
Oct-1981Neutralisation of point defects in Ge and GaAs by hydrogen incorporation.Pearton, SJ
1982The nature of the Ev + 0.23 eV and Ev + 0.38 eV gamma-induced centres in Ge.Pearton, SJ; Tavendale, AJ
Sep-1980Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperaturePearton, SJ; Williams, AA; Tavendale, AJ; Lawson, EM

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