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Results 1-10 of 15 (Search time: 0.002 seconds).
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Issue DateTitleAuthor(s)
Jan-1993Surface passivation of high-purity germanium gamma-ray detectorAlexiev, D; Butcher, KSA; Edmondson, M; Lawson, EM
Jul-1990The measurement of minority carrier diffusion lengths for high purity GaAs using an electron beam induced current techniqueButcher, KSA; Alexiev, D; Tansley, TL; Leung, S
11-Sep-1999Transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade siliconAlexiev, D; Reinhard, MI; Mo, L; Rosenfeld, A
Jan-1981Deep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detectionPearton, SJ; Alexiev, D; Tavendale, AJ; Williams, AA
1-Mar-1996Effect of crucible materials on impurities in LPE-GaAsMo, L; Butcher, KSA; Alexiev, D
Aug-1988Lithium compensation of GaAs.Alexiev, D; Tavendale, AJ
Sep-1984Deep level transient conductance spectrometer for high resistivity semiconductors using a marginal oscillator detector.Alexiev, D; Tavendale, AJ
Nov-1987Neutron transmutation doping of silicon for the production of radiation detectorsAlexiev, D
1-Dec-1995Growth of high purity liquid phase epitaxial GaAs in a silica growth system.Butcher, KSA; Mo, L; Alexiev, D; Tansley, TL
Sep-1991Etch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants.Keane, M; Butcher, KSA; Alexiev, D

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