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Results 1-10 of 11 (Search time: 0.003 seconds).
Item hits:
Issue DateTitleAuthor(s)
Feb-1971The operation near liquid helium temperature of a gold-barrier hyper-pure germanium detector for gamma-raysLawson, EM; Tavendale, AJ
Jan-1993Surface passivation of high-purity germanium gamma-ray detectorAlexiev, D; Butcher, KSA; Edmondson, M; Lawson, EM
Feb-1983An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysisTavendale, AJ; Lawson, EM
Aug-1982A q-switched ruby laser for producing laser-doped contacts to semiconductorsRose, A; Lawson, EM
Sep-1980Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperaturePearton, SJ; Williams, AA; Tavendale, AJ; Lawson, EM
Oct-1981Preliminary investigations of the formation of laser-doped contacts on semiconductorsLawson, EM
Nov-1970A large volume, multi-element Ge(Li) spectrometerLawson, EM; Tavendale, AJ; Dawson, AC
Oct-1987Rapid thermal annealing of neutron transmutation doped siliconLawson, EM; Lee, PJ
Sep-1983Search for an anomalous near-surface yield deficit in Rutherford backscattering spectra from implanted germanium and siliconLawson, EM; Williams, JS; Chivers, DJ; Short, KT; Appleton, BR
Jun-1983A method for annealing ion-implanted silicon on a vitreous carbon strip heaterLawson, EM

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