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dc.contributor.authorAtanacio, AJ-
dc.contributor.authorBak, T-
dc.contributor.authorNowotny, J-
dc.contributor.authorPrince, KE-
dc.identifier.citationAtanacio, A. J., Bak, T., Nowotny, J., & Prince, K. E. (2013). Diffusion kinetics of indium in TiO2 (rutile). Journal of the American Ceramic Society, 96(5), 1366-1371. doi:10.1111/jace.12244en_US
dc.description.abstractThis work determines the self-diffusion coefficients of indium in TiO 2 single crystal (rutile). Diffusion concentration profiles were imposed by deposition of a thin surface layer of InCl3 on the TiO2 single crystal and subsequent annealing in the temperature range 1073-1573 K. The diffusion-induced concentration profiles of indium as a function of depth were determined using secondary ion mass spectrometry (SIMS). These diffusion profiles were used to calculate the self-diffusion coefficients of indium in the polycrystalline In2TiO5 surface layer and the TiO2 single crystal. The temperature dependence of the respective diffusion coefficients, in the range 1073-1573 K, can be expressed by the following formulas: DIn-In2TiO5=1. 9×10-13exp(-142kJ/mol/RT)[m2s-1] and DIn-TiO2=7.4×10-4exp(-316kJ/mol/RT) [m2s-1] The obtained activation energy for bulk diffusion of indium in rutile (316 kJ/mol) is similar to that of zirconium in rutile (325 kJ/mol). The determined diffusion data can be used in selection of optimal processing conditions for TiO2-In2O3 solid solutions. © 2013 The American Ceramic Society.en_US
dc.publisherJohn Wiley & Sons, Incen_US
dc.subjectActivation energyen_US
dc.subjectOxide mineralsen_US
dc.subjectMass spectroscopyen_US
dc.subjectTemperature dependenceen_US
dc.subjectConcentration ratioen_US
dc.titleDiffusion kinetics of indium in TiO2 (rutile)en_US
dc.typeJournal Articleen_US
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