Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/9764
Title: Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
Authors: Johnson, BC
McCallum, JC
Atanacio, AJ
Prince, KE
Keywords: Chemical bonds
Ion implantation
Epitaxy
Ion sources
Activation energy
Nanofluidics
Diffusion
Issue Date: 10-Sep-2009
Publisher: American Institute of Physics
Citation: Johnson, B. C., McCallum, J. C., Atanacio, A. J., & Prince, K. E. (2009). Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation. Applied Physics Letters, 95(10), 101911. doi:org/10.1063/1.3224189
Abstract: The concentration dependence of H diffusion in amorphous Si (a-Si) formed by ion implantation is reported for implanted H profiles. An empirical relationship is proposed which relates the diffusion coefficient to the H concentration valid up to 0.3 at. %. B-enhanced H diffusion is observed and shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is applied to these data. The Department of Electronic Materials Engineering at the Australian National University is acknowledged for providing access to ion implanting facilities. This work was supported by grants from the Australian Research Council and the Australian Institute of Nuclear Science and Engineering (Award No. AINGRA08035). © 2009 American Institute of Physics
Gov't Doc #: 9865
URI: https://doi.org/10.1063/1.3224189
http://apo.ansto.gov.au/dspace/handle/10238/9764
ISSN: 0003-6951
Appears in Collections:Journal Articles

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