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Title: Retention and damage in 3C-β SiC irradiated with He and H ions
Authors: Deslandes, A
Guenette, MC
Thomsen, L
Ionescu, M
Karatchevtseva, I
Lumpkin, GR
Keywords: Ions
Ion implantation
Photoelectron spectroscopy
X-ray spectroscopy
Issue Date: 1-Feb-2016
Publisher: Elsevier B.V.
Citation: Deslandes, A., Guenette, M. C., Thomsen, L., Ionescu, M., Karatchevtseva, I., & Lumpkin, G. R. (2016). Retention and damage in 3C-β SiC irradiated with He and H ions. Journal of Nuclear Materials, 469, 187-193. doi: 10.1016/j.jnucmat.2015.11.022
Abstract: 3C-β SiC was implanted with He and H ions using plasma immersion ion implantation (PIII). Regions of damage were created at various depths by applying a sample stage bias of 5 kV, 10 kV, 20 kV or 30 kV. Raman spectroscopy results indicate that He irradiation leads to more damage compared to H irradiation, as observed via increased disordered C and Si signals, as well as broadening of the SiC peaks. X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) results indicate significant change to the SiC structure and that surface oxidation has occurred following irradiation, with the degree of change varying dependent on impinging He fluence. The distributions of implanted species were measured using elastic recoil detection analysis. Despite the varying degree and depth of damage created in the SiC by the He ion irradiations, the retained H distribution was observed to not be affected by preceding He implantation. © 2015 Elsevier B.V.
Gov't Doc #: 8996
ISSN: 0022-3115
Appears in Collections:Journal Articles

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