Cooled preamplifiers with N- or P-silicon JFET's
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Date
1970-09
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Atomic Energy Commission
Abstract
A voltage sensitive cooled preamplifier has been operated with comparable resolution from n- and p-Si junction field effect transistor's (JFET's). To obtain optimum JFET operating conditions it is necessary to consider in detail the inter-related parameters of device thermal resistance, the variation of JFET noise with temperature and of gate current with drain voltage. Measurement and optimisation procedures are described.
Description
Keywords
Preamplifiers, Silicon, Transistors, Electric potential
Citation
Ryan, R. D. (1970). Cooled preamplifiers with N- or P-silicon JFET's. (AAEC/TM563). Lucas Heights, NSW:Australian Atomic Energy Commission