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Title: Cooled preamplifiers with N- or P-silicon JFET's
Authors: Ryan, RD
Keywords: Preamplifiers
Electric potential
Issue Date: Sep-1970
Publisher: Australian Atomic Energy Commission
Citation: Ryan, R. D. (1970). Cooled preamplifiers with N- or P-silicon JFET's. (AAEC/TM563). Lucas Heights, NSW:Australian Atomic Energy Commission
Abstract: A voltage sensitive cooled preamplifier has been operated with comparable resolution from n- and p-Si junction field effect transistor's (JFET's). To obtain optimum JFET operating conditions it is necessary to consider in detail the inter-related parameters of device thermal resistance, the variation of JFET noise with temperature and of gate current with drain voltage. Measurement and optimisation procedures are described.
Gov't Doc #: 861
ISBN: 0642993777
Appears in Collections:Scientific and Technical Reports

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