Please use this identifier to cite or link to this item:
|Title:||Cooled preamplifiers with N- or P-silicon JFET's|
|Publisher:||Australian Atomic Energy Commission|
|Citation:||Ryan, R. D. (1970). Cooled preamplifiers with N- or P-silicon JFET's. (AAEC/TM563). Lucas Heights, NSW:Australian Atomic Energy Commission|
|Abstract:||A voltage sensitive cooled preamplifier has been operated with comparable resolution from n- and p-Si junction field effect transistor's (JFET's). To obtain optimum JFET operating conditions it is necessary to consider in detail the inter-related parameters of device thermal resistance, the variation of JFET noise with temperature and of gate current with drain voltage. Measurement and optimisation procedures are described.|
|Gov't Doc #:||861|
|Appears in Collections:||Scientific and Technical Reports|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.