Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/851
Title: Cooled preamplifiers with N- or P-silicon JFET's
Authors: Ryan, RD
Keywords: Preamplifiers
Silicon
Transistors
Electric potential
Issue Date: Sep-1970
Publisher: Australian Atomic Energy Commission
Citation: Ryan, R. D. (1970). Cooled preamplifiers with N- or P-silicon JFET's. (AAEC/TM563). Lucas Heights, NSW:Australian Atomic Energy Commission
Abstract: A voltage sensitive cooled preamplifier has been operated with comparable resolution from n- and p-Si junction field effect transistor's (JFET's). To obtain optimum JFET operating conditions it is necessary to consider in detail the inter-related parameters of device thermal resistance, the variation of JFET noise with temperature and of gate current with drain voltage. Measurement and optimisation procedures are described.
Gov't Doc #: 861
URI: http://apo.ansto.gov.au/dspace/handle/10238/851
ISBN: 0642993777
Appears in Collections:Scientific and Technical Reports

Files in This Item:
File Description SizeFormat 
AAEC-TM-563.pdf340.57 kBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.