Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/7502
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dc.contributor.authorLee, JJ-
dc.contributor.authorXing, GZ-
dc.contributor.authorYi, JB-
dc.contributor.authorChen, T-
dc.contributor.authorIonescu, M-
dc.contributor.authorLi, S-
dc.date.accessioned2016-09-14T02:10:30Z-
dc.date.available2016-09-14T02:10:30Z-
dc.date.issued2014-
dc.identifier.citationLee, J. J., Xing, G. Z., Yi, J. B., Chen, T., Ionescu, M., & Li, S. (2014). Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping. Applied Physics Letters, 104(1), 012405. doi:10.1063/1.4861165en_AU
dc.identifier.govdoc7086-
dc.identifier.urihttp://dx.doi.org/10.1063/1.4861165en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/7502-
dc.description.abstractCluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200 Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu3+ ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices. © 2014, AIP Publishing LLC.en_AU
dc.language.isoenen_AU
dc.publisherAIP Scitationen_AU
dc.subjectThin filmsen_AU
dc.subjectMagnetizationen_AU
dc.subjectIonsen_AU
dc.subjectCoercive forceen_AU
dc.subjectElectron beamsen_AU
dc.subjectOxidesen_AU
dc.titleTailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codopingen_AU
dc.typeJournal Articleen_AU
dc.date.statistics2016-09-14-
Appears in Collections:Journal Articles

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