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Title: Etch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants.
Authors: Keane, M
Butcher, KSA
Alexiev, D
Keywords: Gallium arsenides
Aqueous solutions
Aqua regia
Activation energy
Sulfuric acid
Issue Date: Sep-1991
Publisher: Australian Nuclear Science and Technology Organisation
Citation: Keane, M., Butcher, K., Alexiev, D. (1991). Etch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants (ANSTO/E699). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation
Abstract: Etch rate experiments were carried out for (100) GaAs using etching solutions of H2SO4 :H2O2 :H2O (3:1:1 3:1:15) HCl:HNO3 (3:1) HCl:HNO3 :H2O (1: 1:1) and HCl:HNO3 :glycerol (with various dilutions of glycerol). Several differences were seen for the (100) plane compared to previous results for other crystal orientations. The sulphuric acid solutions showed much lower activation energies for etching the (100) plane. The HCl:HNO3 :glycerol solutions showed considerably lower etch rates for the (100) plane probably indicating that they etch GaAs anisotropically. For a 1:1:2 solution of HCl:HNO3 :glycerol a decrease in the etch rate of (100) GaAs was observed in the presence of stirring. This is the opposite result to what is commonly assumed for this polishing etchant. It indicates that the main polishing process attributed to this etchant is not present and in fact the polishing quality of the etchant is probably limited by the etching process which is present.
Gov't Doc #: 749
ISBN: 642599149
ISSN: 10307745
Appears in Collections:Scientific and Technical Reports

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