Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/5401
Title: A High-Temperature-Capacitor Dielectric Based on K0.5Na0.5NbO3-Modified Bi1/2Na1/2TiO3–Bi1/2K1/2TiO3
Authors: Dittmer, R
Anton, EM
Jo, W
Simons, H
Daniels, JE
Hoffman, M
Pokorny, J
Reaney, IM
Rödel, J
Keywords: Lead
PZT
Ferreolectric materials
Dieelectric materials
Ceramics
Raman spectroscopy
Lanthanium
Eectric conductivity
Issue Date: 1-Nov-2012
Publisher: Wiley-Blackwell
Citation: Dittmer, R., Anton, E. M., Jo, W., Simons, H., Daniels, J. E., Hoffman, M., Pokorny, J., Reaney, I. M., & Rödel, J. (2012). A high-temperature-capacitor dielectric based on K0.5Na0.5NbO3-modified Bi1/2Na1/2TiO3–Bi1/2K1/2TiO3. Journal of the American Ceramic Society, 95(11), 3519-3524. doi:10.1111/j.1551-2916.2012.05321.x
Abstract: A high-temperature dielectric, (1–x)(0.6Bi1/2Na1/2TiO3–0.4Bi1/2K1/2TiO3)–xK0.5Na0.5NbO3, off the morphotropic phase boundary of the parent matrix 0.8Bi1/2Na1/2TiO3–0.2Bi1/2K1/2TiO3, has been developed for application as a high-temperature capacitor. In addition to temperature-dependent permittivity and dielectric loss, DC conductivity and field-dependent permittivity are reported. These properties are correlated with temperature-dependent structure data measured at different length scales using Raman spectroscopy and neutron diffraction. It is suggested that all materials investigated are ergodic relaxors with two types of polar nanoregions providing different relaxation mechanisms. The most attractive properties for application as high-temperature dielectrics are obtained in a material with x = 0.15 at less than 10% variation of relative permittivity of about 2100 between 54°C and 400°C. © 2012, Wiley-Blackwell.
Gov't Doc #: 4759
URI: http://dx.doi.org/10.1111/j.1551-2916.2012.05321.x
http://apo.ansto.gov.au/dspace/handle/10238/5401
ISSN: 0002-7820
Appears in Collections:Journal Articles

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