Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/337
Title: Surface passivation of liquid phase epitaxial GaAS
Authors: Alexiev, D
Butcher, KSA
Mo, L
Edmondson, M
Keywords: Passivation
Hydrogenation
Semiconductor devices
Chemical reactions
Issue Date: Oct-1995
Publisher: Australian Nuclear Science and Technology Organisation
Citation: Alexiev, D., Butcher, K. S. A., Mo, L., & Edmondson, M.(1995). Surface passivation of liquid phase epitaxial gaas (ANSTO/E724). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation, Lucas Heights Research Laboratories.
Abstract: Passivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P2S5 -NH4OH (NH4)2Sx and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH4)2Sx passivation also results in improved I-V characteristics though the long term stability of this passivation is questionable.
Gov't Doc #: 412
URI: http://apo.ansto.gov.au/dspace/handle/10238/337
ISBN: 0642599629
ISSN: 10307745
Appears in Collections:Scientific and Technical Reports

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