Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/311
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dc.contributor.authorPearton, SJen_AU
dc.contributor.authorWilliams, AAen_AU
dc.contributor.authorTavendale, AJen_AU
dc.date.accessioned2007-11-22T04:19:01Zen_AU
dc.date.accessioned2010-04-30T04:29:51Z-
dc.date.available2007-11-22T04:19:01Zen_AU
dc.date.available2010-04-30T04:29:51Z-
dc.date.issued1980-12en_AU
dc.identifier.citationPearton, S. J & Tavendale, A. J & Williams, A. A. (1980). Deep level transient spectroscopy of Y-ray induced defects in germanium (AAEC/E-502). Lucas Heights, NSW: Australian Atomic Energy Commission Research Establishment.-
dc.identifier.govdoc188-
dc.identifier.isbn0642596999en_AU
dc.identifier.isbn0642596999-
dc.identifier.otherAAEC-E-502en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/311en_AU
dc.description.abstractDeep level transient capacitance spectroscopy has been used to examine γ-ray induced defect centres in germanium crystals grown under widely varying conditions. A deep acceptor level at Eν + 0.38 eν has been observed for the first time in all p-type samples; this was removed by annealing at 675 deg C for three hours. A new deep donor level at Eс - 0.42 eν observed in n-type material was not removed by this procedure.en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectGermanium-
dc.subjectGamma spectroscopy-
dc.subjectTransients-
dc.subjectSemiconductor detectors-
dc.subjectIrradiation-
dc.titleDeep level transient spectroscopy of y-ray induced defects in germanium.en_AU
dc.titleCrystals-
Appears in Collections:Scientific and Technical Reports

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