Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/309
Title: Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications
Authors: Pearton, SJ
Tavendale, AJ
Williams, AA
Keywords: Emission spectroscopy
Radiation effects
Gamma radiation
Silicon
Field effect transistors
Issue Date: Dec-1980
Publisher: Australian Atomic Energy Commission
Citation: Pearton, S. J., Tavendale, A. J., & Williams, A. A. (1980). Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications. (ANSTO/E-504). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment.
Abstract: A deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transient conductance has been used to observe gamma-ray induced defect centres in the gate junction of 2N4416 Si field effect transistors. The defect concentrations increased linearly wth gamma-dose in the range 50 kGy to 10 x 10 3 kGy (5-1000 Mrad) for the common E(c) - 0.17 eV level and in the range 500 kGy to 10 x 10 3 kGy (50- 1000 Mrad) for the levels E(c) - 0.22 eV and E(c) - 0.44 eV. Another common level a hole trap at E(v) + 0.42 eV was the only minority trap observed. The technique may be useful for measuring gamma-fluxes in situations inaccessible to standard dosemeters (e.g. flux-mapping).
Gov't Doc #: 392
URI: http://apo.ansto.gov.au/dspace/handle/10238/309
ISBN: 0642597030
Appears in Collections:Scientific and Technical Reports

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