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https://apo.ansto.gov.au/dspace/handle/10238/309
Title: | Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications |
Authors: | Pearton, SJ Tavendale, AJ Williams, AA |
Keywords: | Emission spectroscopy Radiation effects Gamma radiation Silicon Field effect transistors |
Issue Date: | Dec-1980 |
Publisher: | Australian Atomic Energy Commission |
Citation: | Pearton, S. J., Tavendale, A. J., & Williams, A. A. (1980). Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications. (ANSTO/E-504). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment. |
Abstract: | A deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transient conductance has been used to observe gamma-ray induced defect centres in the gate junction of 2N4416 Si field effect transistors. The defect concentrations increased linearly wth gamma-dose in the range 50 kGy to 10 x 10 3 kGy (5-1000 Mrad) for the common E(c) - 0.17 eV level and in the range 500 kGy to 10 x 10 3 kGy (50- 1000 Mrad) for the levels E(c) - 0.22 eV and E(c) - 0.44 eV. Another common level a hole trap at E(v) + 0.42 eV was the only minority trap observed. The technique may be useful for measuring gamma-fluxes in situations inaccessible to standard dosemeters (e.g. flux-mapping). |
Gov't Doc #: | 392 |
URI: | http://apo.ansto.gov.au/dspace/handle/10238/309 |
ISBN: | 0642597030 |
Appears in Collections: | Scientific and Technical Reports |
Files in This Item:
File | Description | Size | Format | |
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AAEC-E-504.pdf | 175.83 kB | Adobe PDF | ![]() View/Open |
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