Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/2651
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dc.contributor.authorPhotongkam, Pen_AU
dc.contributor.authorIonescu, Men_AU
dc.contributor.authorZeng, Ren_AU
dc.contributor.authorYu, DHen_AU
dc.contributor.authorLi, Sen_AU
dc.date.accessioned2009-12-08T04:44:39Zen_AU
dc.date.accessioned2010-04-30T04:56:36Z-
dc.date.available2009-12-08T04:44:39Zen_AU
dc.date.available2010-04-30T04:56:36Z-
dc.date.issued2007-10-15en_AU
dc.identifier.citationPhotongkam, P., Ionescu, M., Zeng, R., Yu, D., & Li, S. (2007). Development of advanced diluted magnetic semiconductors with rare earth doping technology. 6th International Symposium on Metallic Multilayers (MML2007), 15th – 19th October 2007. Crawley, Western Australia: University of Western Australia.en_AU
dc.identifier.govdoc1013-
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/2651en_AU
dc.description.sponsorshipInstitute of Electrical and Electronics Engineers (IEEE); Australian Research Network for Advanced Materials (ARNAM); Australian Research Council (ARC); Nanotechnology Networken_AU
dc.language.isoenen_AU
dc.subjectRare earthsen_AU
dc.subjectDoped materialsen_AU
dc.subjectMagnetic semiconductorsen_AU
dc.subjectDilutionen_AU
dc.subjectLayersen_AU
dc.subjectMetallurgyen_AU
dc.titleDevelopment of advanced diluted magnetic semiconductors with rare earth doping technologyen_AU
dc.typeConference Posteren_AU
dc.date.statistics2007-10-15en_AU
Appears in Collections:Conference Publications

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