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https://apo.ansto.gov.au/dspace/handle/10238/2305| Title: | Effect of crucible materials on impurities in LPE-GaAs |
| Authors: | Mo, L Butcher, KSA Alexiev, D |
| Keywords: | Crucibles Gallium arsenides Capacitance Electric potential Deep level transient spectroscopy Epitaxy |
| Issue Date: | 1-Mar-1996 |
| Publisher: | Elsevier |
| Citation: | Mo, L., Butcher, K. S. A., & Alexiev, D. (1996). Effect of crucible materials on impurities in LPE-GaAs. Journal of Crystal Growth, 160(1-2), 7-12. doi:10.1016/0022-0248(95)00895-0 |
| Abstract: | LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps. © 1996, Elsevier Ltd. |
| Gov't Doc #: | 2503 |
| URI: | http://dx.doi.org/10.1016/0022-0248(95)00895-0 http://apo.ansto.gov.au/dspace/handle/10238/2305 |
| ISSN: | 0022-0248 |
| Appears in Collections: | Journal Articles |
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