Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/2305
Title: Effect of crucible materials on impurities in LPE-GaAs
Authors: Mo, L
Butcher, KSA
Alexiev, D
Keywords: Crucibles
Gallium arsenides
Capacitance
Electric potential
Deep level transient spectroscopy
Epitaxy
Issue Date: 1-Mar-1996
Publisher: Elsevier
Citation: Mo, L., Butcher, K. S. A., & Alexiev, D. (1996). Effect of crucible materials on impurities in LPE-GaAs. Journal of Crystal Growth, 160(1-2), 7-12. doi:10.1016/0022-0248(95)00895-0
Abstract: LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps. © 1996, Elsevier Ltd.
Gov't Doc #: 2503
URI: http://dx.doi.org/10.1016/0022-0248(95)00895-0
http://apo.ansto.gov.au/dspace/handle/10238/2305
ISSN: 0022-0248
Appears in Collections:Journal Articles

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