Growth of high purity liquid phase epitaxial GaAs in a silica growth system.

Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/2304

Title:	Growth of high purity liquid phase epitaxial GaAs in a silica growth system.
Authors:	Butcher, KSA Mo, L Alexiev, D Tansley, TL
Keywords:	Silica Gallium arsenides Ion microprobe analysis Mass spectroscopy Defects Growth factors
Issue Date:	1-Dec-1995
Publisher:	Elsevier
Citation:	Butcher, K. S. A., Mo, L., Alexiev, D., & Tansley, T. L. (1995). Growth of high purity liquid phase epitaxial GaAs in a silica growth system. Journal of Crystal Growth, 156(4), 361-367. doi:10.1016/0022-0248(95)00297-9
Abstract:	Liquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (NA,D ≈ 1013 cm−3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (C---V) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow. © 1995, Elsevier Ltd.
Gov't Doc #:	2502
URI:	http://dx.doi.org/10.1016/0022-0248(95)00297-9 http://apo.ansto.gov.au/dspace/handle/10238/2304
ISSN:	0022-0248
Appears in Collections:	Journal Articles

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