Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/162
Title: An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis
Authors: Tavendale, AJ
Lawson, EM
Keywords: Arsenic
Silicon
Electrodeposited coatings
Radiation scattering analysis
Doped materials
Issue Date: Feb-1983
Publisher: Australian Atomic Energy Commission
Citation: Tavendale, A. J., & Lawson, E. M. (1983). An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis. (AAEC/E561). Lucas Heights, NSW: Australian Atomic Energy Commission.
Abstract: Rutherford scattering analysis with 2.0 MeV 4He+ ions failed to detect doping of silicon substrates with arsenic following cathodic electroplating. This is in contrast with the claims of J. Antula [J. Appl. Phys., 48:2581, 1977] that electromigration leads to the formation of n-type, arsenic-doped, near-surface layers in silicon. Arsenic was detected only in the surface oxide layer formed during plating. Complementary thermoprobe measurements also showed no doping effects in the silicon substrates.
Gov't Doc #: 111
URI: http://apo.ansto.gov.au/dspace/handle/10238/162
ISBN: 0642597634
Appears in Collections:Scientific and Technical Reports

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