Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/152
Title: A q-switched ruby laser for producing laser-doped contacts to semiconductors
Authors: Rose, A
Lawson, EM
Keywords: Laser radiation
Semiconductor materials
Ruby lasers
Q-switching
Crystal doping
Germanium
Silicon
Issue Date: Aug-1982
Publisher: Australian Atomic Energy Commission
Citation: Rose, A., & Lawson, E. M. (1982). A q-switched ruby laser for producing laser-doped contacts to semiconductors. (AAEC/E546). Lucas Heights, NSW: Australian Atomic Energy Commission.
Abstract: A description is given of a q-switched ruby laser used for producing laser-doped contacts on semiconductors.Homogenisation of the laser beam and measurement of the output energy are discussed and some attention is given to the problems of sample reflectivity. A brief outline of the laser-doping process is provided, together with recent experimental results and details relating to the production and analysis of the contacts. A preliminary result of defect characteristics after laser irradiation of germanium is also presented.
Gov't Doc #: 101
URI: http://apo.ansto.gov.au/dspace/handle/10238/152
ISBN: 0642597499
Appears in Collections:Scientific and Technical Reports

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