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Title: Influence of annealing conditions on the growth and structure of embedded Pt nanocrystals.
Authors: Giulian, R
Araujo, LL
Kluth, P
Sprouster, DJ
Schnohr, CS
Johannessen, B
Foran, GJ
Ridgway, MC
Keywords: Annealing
Silicon compounds
Transmission electron microscopy
Small angle scattering
Issue Date: 15-Feb-2009
Publisher: American Institute of Physics
Citation: Giulian, R., Araujo, L. L., Kluth, P., Sprouster, D. J., Schnohr, C. S., Johannessen, B., Foran, G. J. & Ridgway, M. C. (2009). Influence of annealing conditions on the growth and structure of embedded Pt nanocrystals. Journal of Applied Physics, 105(4), 8. doi:10.1063/1.3079506
Abstract: The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO2 has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O-2, or forming gas (95% N-2: 5% H-2) at temperatures ranging from 500 degrees C-1300 degrees C form spherical NCs with mean diameters ranging from 1-14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O-2 and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 degrees C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm. © 2009, American Institute of Physics
Gov't Doc #: 1253
ISSN: 0021-8979
Appears in Collections:Journal Articles

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