Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/131
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dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorTavendale, AJen_AU
dc.date.accessioned2007-11-22T04:13:16Zen_AU
dc.date.accessioned2010-04-30T04:31:55Z-
dc.date.available2007-11-22T04:13:16Zen_AU
dc.date.available2010-04-30T04:31:55Z-
dc.date.issued1988-08en_AU
dc.identifier.citationAlexieu, D., & Tavendale, A. (1988). Lithium compensation of GaAs (ANSTO/E-676). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation Lucas Heights Research Laboratories.-
dc.identifier.govdoc311-
dc.identifier.isbn0642598908en_AU
dc.identifier.isbn0642598908-
dc.identifier.issn10307745en_AU
dc.identifier.issn1030-7745-
dc.identifier.otherANSTO-E-676en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/131en_AU
dc.description.abstractDefects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments the effect of Li diffusion on existing trap spectra defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made.en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectSemiconductor materials-
dc.subjectSpectroscopy-
dc.subjectArsenides-
dc.subjectSpectroscopy-
dc.subjectLithium-
dc.subjectGallium-
dc.subjectDiffusion-
dc.titleLithium compensation of GaAs.en_AU
Appears in Collections:Scientific and Technical Reports

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