Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/131
Title: Lithium compensation of GaAs.
Authors: Alexiev, D
Tavendale, AJ
Keywords: Semiconductor materials
Spectroscopy
Arsenides
Spectroscopy
Lithium
Gallium
Diffusion
Issue Date: Aug-1988
Publisher: Australian Nuclear Science and Technology Organisation
Citation: Alexieu, D., & Tavendale, A. (1988). Lithium compensation of GaAs (ANSTO/E-676). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation Lucas Heights Research Laboratories.
Abstract: Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments the effect of Li diffusion on existing trap spectra defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made.
Gov't Doc #: 311
URI: http://apo.ansto.gov.au/dspace/handle/10238/131
ISBN: 0642598908
0642598908
ISSN: 10307745
1030-7745
Appears in Collections:Scientific and Technical Reports

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