Lithium compensation of GaAs.
Australian Nuclear Science and Technology Organisation
Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments the effect of Li diffusion on existing trap spectra defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made.
Semiconductor materials, Spectroscopy, Arsenides, Spectroscopy, Lithium, Gallium, Diffusion
Alexieu, D., & Tavendale, A. (1988). Lithium compensation of GaAs (ANSTO/E-676). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation Lucas Heights Research Laboratories.