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dc.contributor.authorKluth, SM-
dc.contributor.authorJohannessen, B-
dc.contributor.authorKluth, P-
dc.contributor.authorGlover, CJ-
dc.contributor.authorForan, GJ-
dc.contributor.authorRidgway, MC-
dc.identifier.citationKluth, S. M., Johannessen, B., Kluth, P., Glover, C. J., Foran, G. J. & Ridgway, M. C.(2005). lon-irradiation-induced porosity in GaSb and InSb. Paper presented to the 29th Condensed Matter and Materials Meeting, "Australian Institute of Physics Sixteenth Biennial Congress", Canberra, 2005, 31 January - 4 February 2005. Retrieved from:
dc.identifier.otherCMMSP WEC12-
dc.description.abstractIon irradiation of crystalline GaSb and InSb can yield not only amorphisation, as commonly observed in semiconductors, but also porosity. Extended x-ray absorption fine structure spectroscopy, electron microscopy and Rutherford backscattering spectrometry have been used to determine the exact nature of and relationship between these two transformations. In both materials, low dose, room temperature implantation produces spherical voids yet the material remains crystalline. With increasing implant dose, the porous layer eventually evolves into a network of straight rods 15nm in diameter. We suggest the porosity arises from preferential clustering of interstitials into extended defects and vacancies agglomerating to form voids.en_US
dc.publisherAustralian Institute of Physicsen_US
dc.subjectAntimony compoundsen_US
dc.subjectCharged particlesen_US
dc.subjectCrystal defectsen_US
dc.subjectCrystal structureen_US
dc.subjectGallium comoundsen_US
dc.subjectIndium compoundsen_US
dc.subjectPoint defectsen_US
dc.subjectRadiation effectsen_US
dc.titleIon-irradiation-induced porosity in GaSb and InSben_US
dc.typeConference Abstracten_US
Appears in Collections:Conference Publications

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