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Browsing by Author Alexiev, D
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Showing results 19 to 32 of 32
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Issue Date
Title
Author(s)
Jul-1992
Liquid phase epitaxy of gallium arsenide - a review
Alexiev, D
Aug-1988
Lithium compensation of GaAs.
Alexiev, D
;
Tavendale, AJ
1-Jul-1990
The measurement of minority carrier diffusion lengths for high purity GaAs, using an electron beam induced current technique
Butcher, KSA
;
Alexiev, D
;
Tansley, Tl
;
Seung, S
Dec-2008
Monte Carlo simulation of a Au-198 thin foil: the response of a 4πβ-γ detector
Bignell, LJ
;
Mo, L
;
Smith, ML
;
Alexiev, D
;
Hashemi-Nezhad, SR
Dec-1987
Neutron transmutation doping of gallium arsenide.
Alexiev, D
Nov-1987
Neutron transmutation doping of silicon for the production of radiation detectors
Alexiev, D
Sep-2002
Review of Ge detectors for gamma spectroscopy
Alexiev, D
;
Reinhard, MI
;
Mo, L
;
Rosenfeld, AB
;
Smith, ML
10-Sep-2009
Sensitivity and uncertainty analysis of the simulation of 123I and 54Mn decay in liquid scintillation vials
Bignell, LJ
;
Mo, L
;
Smith, ML
;
Steele, T
;
Alexiev, D
;
Hashemi-Nezhad, SR
Feb-2010
Sipping test: checking for failure of fuel elements at the OPAL Reactor
Smith, ML
;
Bignell, LJ
;
Alexiev, D
;
Mo, L
1-Jul-2009
Study of the influence of the rare-earth elements on the properties of lead iodide
Matuchova, M
;
Zdansky, K
;
Zavadil, J
;
Danilewsky, A
;
Riesz, F
;
Hassan, MAS
;
Alexiev, D
;
Kral, R
Jan-1993
Surface passivation of high-purity germanium gamma-ray detector
Alexiev, D
;
Butcher, KSA
;
Edmondson, M
;
Lawson, EM
Oct-1995
Surface passivation of liquid phase epitaxial GaAS
Alexiev, D
;
Butcher, KSA
;
Mo, L
;
Edmondson, M
Jul-1990
The measurement of minority carrier diffusion lengths for high purity GaAs using an electron beam induced current technique
Butcher, KSA
;
Alexiev, D
;
Tansley, TL
;
Leung, S
11-Sep-1999
Transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade silicon
Alexiev, D
;
Reinhard, MI
;
Mo, L
;
Rosenfeld, AB