Browsing by Author "Wesch, W"

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    Preferential amorphisation of Ge nanocrystals in a silica matrix
    (Elsevier, 2004-09-05) Ridgway, MC; Azevedo, GDM; Elliman, RG; Wesch, W; Glover, CJ; Miller, R; Llewellyn, DJ; Foran, GJ; Hansen, JL; Nylandsted Larsen, A
    Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface. © 2005 Elsevier B.V
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    Preferential amorphisation of Ge nanocrystals in a silica matrix
    (Australian Institute of Physics, 2005-01-31) Ridgway, MC; Azevedo, GDM; Elliman, RG; Wesch, W; Glover, CJ; Miller, R; Llewellyn, DJ; Foran, GJ; Hansen, JL; Nylandsted Larsen, A
    Relative to bulk crystalline material, Ge nanocrystals in a silica matrix exhibit subtle structural perturbations including a non-Gaussian inter-atomic distance distribution. We now demonstrate such nanocrystals are extremely sensitive to ion irradiation. Using transmission electron microscopy, Raman spectroscopy and extended x-ray absorption fine structure spectroscopy, the crystalline-to-amorphous phase transformation in -8 nm diameter nanocrystals and bulk crystalline material has been compared. Amorphisation of Ge nanocrytals in a silica matrix was achieved at an ion dose -100 times less than that required for bulk crystalline standards. This rapid amorphisation of Ge nanocrystals is attributed to the preferential nucleation of the amorphous phase at the nanocrystal/matrix interface, the pre-irradiation, higher-energy structural state of the nanocrystals themselves and an enhanced nanocrystal vacancy concentration due to the more effective trapping of irradiation-induced interstitials at the nanocrystal/matrix interface and inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix. To demonstrate the significance of the latter, we show ion irradiation of -2 nm diameter nanocrystals yields their dissolution when the range of recoiled Ge atoms exceeds the nanocrystal bounds.